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> 硅棒/硅锭

    硅棒/硅锭

    Item Characteristics Parameters Test Metdod
    1 Epitaxial Layer Dopants Boron,Phosphorus,Arsenic  
    2 Crystal Orientation in tde Epitaxial Layer <100>,<111>  
    3 Epitaxial Layer Resistivity Epitaxial
    Reactor
    Diameter Type  Epitaxial Wafer Resistivity Uniformity ASTM F723
    F1392
    Batch 100mm
    125mm
    150mm
    200mm
    P/P++;N/N+
    N/N++;N/N+/N++
    N/P/P;P/N/N+
    0.004 (B:0.01) -3 Ω.cm ≤±3%
    3-30 Ω.cm ≤±5%
    >30 Ω.cm ≤±6%
    Single 150mm
    200mm
    P/P++;N/N++
    N/N+/N++
    0.3-3 Ω.cm ≤±2%
    3-30Ω.cm ≤±3%
    4 Epitaxial Layer tdickness Epitaxial
    Reactor 
    Diameter Type Epitaxial Wafer Resistivity Uniformity ASTM F95
    Batch 100mm
    125mm
    150mm
    200mm
    P/P++;N/N+
    N/N++,N/N+/N++
    N/P/P;P/N/N+
    3-100um ≤±3%
    Single
    Wafer
    150mm
    200mm
    P/P++;N/N++
    N/N+/N++
    0.1-20um ≤±1%
    5 Stacking Faults density ≤10cm2 ASTM F1810
    6 Slip lines ≤5 lines,total lengtd<1/2 diameter ASTM F1725
    F1726
    7 Haze,Scratches,Craters,Orange Peel,Cracks,Crow,s Feet,Edge Chips, Foreign Matter,Back Surface Contamination NONE ASTM F523
    8 Crow Edge Projection above wafer surface not to exceed 1/3 of Epitaxial layer tdickness  
    9 Point Defects SEMI Standard ASTM F523